SGB30N60 vs SGW30N60

Product Attributes

Part Number SGB30N60 SGW30N60
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
SGB30N60 SGW30N60
Product Status Active Active
IGBT Type NPT NPT
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V
Current - Collector (Ic) (Max) 41 A 41 A
Current - Collector Pulsed (Icm) 112 A 112 A
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 30A 2.4V @ 15V, 30A
Power - Max 250 W 250 W
Switching Energy 1.29mJ 640µJ (on), 650µJ (off)
Input Type Standard Standard
Gate Charge 140 nC 140 nC
Td (on/off) @ 25°C 44ns/291ns 44ns/291ns
Test Condition 400V, 30A, 11Ohm, 15V 400V, 30A, 11Ohm, 15V
Reverse Recovery Time (trr) - -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Through Hole
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-247-3
Supplier Device Package PG-TO263-3-2 PG-TO247-3-21