SGB02N120ATMA1 vs SGB07N120ATMA1

Product Attributes

Part Number SGB02N120ATMA1 SGB07N120ATMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
SGB02N120ATMA1 SGB07N120ATMA1
Product Status Last Time Buy Last Time Buy
IGBT Type NPT NPT
Voltage - Collector Emitter Breakdown (Max) 1200 V 1200 V
Current - Collector (Ic) (Max) 6.2 A 16.5 A
Current - Collector Pulsed (Icm) 9.6 A 27 A
Vce(on) (Max) @ Vge, Ic 3.6V @ 15V, 2A 3.6V @ 15V, 8A
Power - Max 62 W 125 W
Switching Energy 220µJ 1mJ
Input Type Standard Standard
Gate Charge 11 nC 70 nC
Td (on/off) @ 25°C 23ns/260ns 27ns/440ns
Test Condition 800V, 2A, 91Ohm, 15V 800V, 8A, 47Ohm, 15V
Reverse Recovery Time (trr) - -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package PG-TO263-3-2 PG-TO263-3-2