| Part Number | SDT10S30 | SDT10S60 |
|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Category | Diodes - Rectifiers - Single | Diodes - Rectifiers - Single |
|
|
|
| Product Status | Obsolete | Obsolete |
| Diode Type | Silicon Carbide Schottky | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 300 V | 600 V |
| Current - Average Rectified (Io) | 10A (DC) | 10A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A | 1.7 V @ 10 A |
| Speed | No Recovery Time > 500mA (Io) | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns | 0 ns |
| Current - Reverse Leakage @ Vr | 200 µA @ 300 V | 350 µA @ 600 V |
| Capacitance @ Vr, F | 600pF @ 0V, 1MHz | 350pF @ 0V, 1MHz |
| Mounting Type | Through Hole | Through Hole |
| Package / Case | TO-220-2 | TO-220-2 |
| Supplier Device Package | PG-TO220-2-2 | PG-TO220-2-2 |
| Operating Temperature - Junction | -55°C ~ 175°C | -55°C ~ 175°C |