| Part Number | SCT10N120 | SCT30N120 |
|---|---|---|
| Manufacturer | STMicroelectronics | STMicroelectronics |
| Category | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
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| Product Status | Active | Active |
| FET Type | N-Channel | N-Channel |
| Technology | SiCFET (Silicon Carbide) | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) | 40A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 20V | 20V |
| Rds On (Max) @ Id, Vgs | 690mOhm @ 6A, 20V | 100mOhm @ 20A, 20V |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA | 2.6V @ 1mA (Typ) |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 20 V | 105 nC @ 20 V |
| Vgs (Max) | +25V, -10V | +25V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 290 pF @ 400 V | 1700 pF @ 400 V |
| FET Feature | - | - |
| Power Dissipation (Max) | 150W (Tc) | 270W (Tc) |
| Operating Temperature | -55°C ~ 200°C (TJ) | -55°C ~ 200°C (TJ) |
| Mounting Type | Through Hole | Through Hole |
| Supplier Device Package | HiP247™ | HiP247™ |
| Package / Case | TO-247-3 | TO-247-3 |