SCT30N120H vs SCT20N120H

Product Attributes

Part Number SCT30N120H SCT20N120H
Manufacturer STMicroelectronics STMicroelectronics
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
SCT30N120H SCT20N120H
Product Status Active Active
FET Type N-Channel N-Channel
Technology SiCFET (Silicon Carbide) SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V 1200 V
Current - Continuous Drain (Id) @ 25°C 40A (Tc) 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V 20V
Rds On (Max) @ Id, Vgs 100mOhm @ 20A, 20V 290mOhm @ 10A, 20V
Vgs(th) (Max) @ Id 3.5V @ 1mA 3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 105 nC @ 20 V 45 nC @ 20 V
Vgs (Max) +25V, -10V +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds 1700 pF @ 400 V 650 pF @ 400 V
FET Feature - -
Power Dissipation (Max) 270W (Tc) 175W (Tc)
Operating Temperature -55°C ~ 200°C (TJ) -55°C ~ 200°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package H2Pak-2 H2Pak-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB