RJP60D0DPM-00#T1 vs RJP60F0DPM-00#T1

Product Attributes

Part Number RJP60D0DPM-00#T1 RJP60F0DPM-00#T1
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
RJP60D0DPM-00#T1 RJP60F0DPM-00#T1
Product Status Active Obsolete
IGBT Type - Trench
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V
Current - Collector (Ic) (Max) 45 A 50 A
Current - Collector Pulsed (Icm) - -
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 22A 1.82V @ 15V, 25A
Power - Max 40 W 40 W
Switching Energy - -
Input Type Standard Standard
Gate Charge 45 nC -
Td (on/off) @ 25°C 35ns/90ns 46ns/70ns
Test Condition 300V, 22A, 5Ohm, 15V 400V, 30A, 5Ohm, 15V
Reverse Recovery Time (trr) - -
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack
Supplier Device Package TO-3PFM TO-3PFM