RJK6002DPD-00#J2 vs RJK6032DPD-00#J2

Product Attributes

Part Number RJK6002DPD-00#J2 RJK6032DPD-00#J2
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
RJK6002DPD-00#J2 RJK6032DPD-00#J2
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 2A (Ta) 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 6.8Ohm @ 1A, 10V 4.3Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id - -
Gate Charge (Qg) (Max) @ Vgs 6.2 nC @ 10 V 9 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 165 pF @ 25 V 285 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 30W (Tc) 40.3W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package MP-3A MP-3A
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63