RJK60S4DPP-E0#T2 vs RJK6014DPP-E0#T2

Product Attributes

Part Number RJK60S4DPP-E0#T2 RJK6014DPP-E0#T2
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
RJK60S4DPP-E0#T2 RJK6014DPP-E0#T2
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 16A (Tc) 16A (Ta)
Drive Voltage (Max Rds On, Min Rds On) - 10V
Rds On (Max) @ Id, Vgs 290mOhm @ 8A, 10V 575mOhm @ 8A, 10V
Vgs(th) (Max) @ Id - -
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 10 V 45 nC @ 10 V
Vgs (Max) - ±30V
Input Capacitance (Ciss) (Max) @ Vds 988 pF @ 25 V 1800 pF @ 25 V
FET Feature Super Junction -
Power Dissipation (Max) 29.9W (Tc) 35W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack