RJK5012DPE-00#J3 vs RJK5013DPE-00#J3

Product Attributes

Part Number RJK5012DPE-00#J3 RJK5013DPE-00#J3
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
RJK5012DPE-00#J3 RJK5013DPE-00#J3
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 12A (Ta) 14A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 620mOhm @ 6A, 10V 465mOhm @ 7A, 10V
Vgs(th) (Max) @ Id - -
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V 38 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1100 pF @ 25 V 1450 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 100W (Tc) 100W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package LDPAK LDPAK
Package / Case SC-83 SC-83