RJK2055DPA-WS#J0 vs RJK2057DPA-WS#J0

Product Attributes

Part Number RJK2055DPA-WS#J0 RJK2057DPA-WS#J0
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
RJK2055DPA-WS#J0 RJK2057DPA-WS#J0
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 20A (Ta) 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 69mOhm @ 10A, 10V 85mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1mA 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 38 nC @ 10 V 19 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 2400 pF @ 25 V 1250 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 30W (Tc) 30W (Tc)
Operating Temperature 150°C 150°C
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-WPAK (3) 8-WPAK (3)
Package / Case 8-PowerWDFN 8-PowerWDFN