RJK1002DPN-A0#T2 vs RJK1002DPN-E0#T2

Product Attributes

Part Number RJK1002DPN-A0#T2 RJK1002DPN-E0#T2
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
RJK1002DPN-A0#T2 RJK1002DPN-E0#T2
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 70A (Ta) 70A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 7.6mOhm @ 35A, 10V 7.6mOhm @ 35A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA -
Gate Charge (Qg) (Max) @ Vgs 94 nC @ 10 V 94 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6450 pF @ 10 V 6450 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 150W (Ta) 150W (Tc)
Operating Temperature 150°C 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220ABA TO-220AB
Package / Case TO-220-3 TO-220-3