RJH60F5BDPQ-A0#T0 vs RJH60F6BDPQ-A0#T0

Product Attributes

Part Number RJH60F5BDPQ-A0#T0 RJH60F6BDPQ-A0#T0
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
RJH60F5BDPQ-A0#T0 RJH60F6BDPQ-A0#T0
Product Status Active Obsolete
IGBT Type Trench Trench
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V
Current - Collector (Ic) (Max) 80 A 85 A
Current - Collector Pulsed (Icm) - -
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 40A 1.75V @ 15V, 45A
Power - Max 260.4 W 297.6 W
Switching Energy - -
Input Type Standard Standard
Gate Charge - -
Td (on/off) @ 25°C 53ns/95ns 58ns/131ns
Test Condition 400V, 30A, 5Ohm, 15V 400V, 30A, 5Ohm, 15V
Reverse Recovery Time (trr) 25 ns 25 ns
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Supplier Device Package TO-247A TO-247A