RJH60D7DPQ-E0#T2 vs RJH60D7BDPQ-E0#T2

Product Attributes

Part Number RJH60D7DPQ-E0#T2 RJH60D7BDPQ-E0#T2
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
RJH60D7DPQ-E0#T2 RJH60D7BDPQ-E0#T2
Product Status Active Active
IGBT Type Trench Trench
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V
Current - Collector (Ic) (Max) 90 A 90 A
Current - Collector Pulsed (Icm) - -
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 50A 2.2V @ 15V, 50A
Power - Max 300 W 300 W
Switching Energy 1.1mJ (on), 600µJ (off) 700µJ (on), 1.4mJ (off)
Input Type Standard Standard
Gate Charge 130 nC 125 nC
Td (on/off) @ 25°C 60ns/190ns 60ns/180ns
Test Condition 300V, 50A, 5Ohm, 15V 300V, 50A, 5Ohm, 15V
Reverse Recovery Time (trr) 100 ns 25 ns
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Supplier Device Package TO-247 TO-247