| Part Number | RJH60D7BDPQ-E0#T2 | RJH60D5BDPQ-E0#T2 |
|---|---|---|
| Manufacturer | Renesas Electronics America Inc | Renesas Electronics America Inc |
| Category | Transistors - IGBTs - Single | Transistors - IGBTs - Single |
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| Product Status | Active | Active |
| IGBT Type | Trench | Trench |
| Voltage - Collector Emitter Breakdown (Max) | 600 V | 600 V |
| Current - Collector (Ic) (Max) | 90 A | 75 A |
| Current - Collector Pulsed (Icm) | - | - |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 50A | 2.2V @ 15V, 37A |
| Power - Max | 300 W | 200 W |
| Switching Energy | 700µJ (on), 1.4mJ (off) | 400µJ (on), 810µJ (off) |
| Input Type | Standard | Standard |
| Gate Charge | 125 nC | 78 nC |
| Td (on/off) @ 25°C | 60ns/180ns | 50ns/130ns |
| Test Condition | 300V, 50A, 5Ohm, 15V | 300V, 37A, 5Ohm, 15V |
| Reverse Recovery Time (trr) | 25 ns | 25 ns |
| Operating Temperature | 150°C (TJ) | 150°C (TJ) |
| Mounting Type | Through Hole | Through Hole |
| Package / Case | TO-247-3 | TO-247-3 |
| Supplier Device Package | TO-247 | TO-247 |