RJH60D0DPM-00#T1 vs RJP60D0DPM-00#T1

Product Attributes

Part Number RJH60D0DPM-00#T1 RJP60D0DPM-00#T1
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
RJH60D0DPM-00#T1 RJP60D0DPM-00#T1
Product Status Active Active
IGBT Type Trench -
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V
Current - Collector (Ic) (Max) 45 A 45 A
Current - Collector Pulsed (Icm) - -
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 22A 2.2V @ 15V, 22A
Power - Max 40 W 40 W
Switching Energy 230µJ (on), 290µJ (off) -
Input Type Standard Standard
Gate Charge 46 nC 45 nC
Td (on/off) @ 25°C 40ns/80ns 35ns/90ns
Test Condition 300V, 22A, 5Ohm, 15V 300V, 22A, 5Ohm, 15V
Reverse Recovery Time (trr) 100 ns -
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack
Supplier Device Package TO-3PFM TO-3PFM