RFP12N10L vs RFP2N10L

Product Attributes

Part Number RFP12N10L RFP2N10L
Manufacturer onsemi onsemi
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
RFP12N10L RFP2N10L
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc) 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V 5V
Rds On (Max) @ Id, Vgs 200mOhm @ 12A, 5V 1.05Ohm @ 2A, 5V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±10V ±10V
Input Capacitance (Ciss) (Max) @ Vds 900 pF @ 25 V 200 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 60W (Tc) 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3