RFP4N05 vs RFP14N05

Product Attributes

Part Number RFP4N05 RFP14N05
Manufacturer Harris Corporation onsemi
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
RFP4N05 RFP14N05
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 50 V 50 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc) 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V -
Rds On (Max) @ Id, Vgs 800mOhm @ 4A, 10V 100mOhm @ 14A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - 40 nC @ 20 V
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 200 pF @ 25 V 570 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 25W (Tc) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220 TO-220-3
Package / Case TO-220-3 TO-220-3