RFD16N05LSM vs RFD16N05SM

Product Attributes

Part Number RFD16N05LSM RFD16N05SM
Manufacturer Harris Corporation Fairchild Semiconductor
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
RFD16N05LSM RFD16N05SM
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 50 V 50 V
Current - Continuous Drain (Id) @ 25°C 16A (Tc) 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 5V 10V
Rds On (Max) @ Id, Vgs 47mOhm @ 16A, 5V 47mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 2V @ 250mA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V 80 nC @ 20 V
Vgs (Max) ±10V ±20V
Input Capacitance (Ciss) (Max) @ Vds - 900 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 60W (Tc) 72W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-252AA TO-252, (D-Pak)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63