PZT651T1G vs PZT751T1G

Product Attributes

Part Number PZT651T1G PZT751T1G
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
PZT651T1G PZT751T1G
Product Status Active Active
Transistor Type NPN PNP
Current - Collector (Ic) (Max) 2 A 2 A
Voltage - Collector Emitter Breakdown (Max) 60 V 60 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 200mA, 2A 500mV @ 200mA, 2A
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 75 @ 1A, 2V 75 @ 1A, 2V
Power - Max 800 mW 800 mW
Frequency - Transition 75MHz 75MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package SOT-223 (TO-261) SOT-223 (TO-261)