PXN010-30QLJ vs PXN017-30QLJ

Product Attributes

Part Number PXN010-30QLJ PXN017-30QLJ
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
PXN010-30QLJ PXN017-30QLJ
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 10.3A (Ta), 28A (Tc) 7.9A (Ta), 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 10.2mOhm @ 10.3A, 10V 17.4mOhm @ 7.9A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12.3 nC @ 10 V 7.7 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 580 pF @ 15 V 350 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 1.7W (Ta), 12.5W (Tc) 1.7W (Ta), 10.9W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package MLPAK33 MLPAK33
Package / Case 8-PowerVDFN 8-PowerVDFN