PRMH10Z vs PUMH10Z

Product Attributes

Part Number PRMH10Z PUMH10Z
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Category Transistors - Bipolar (BJT) - Arrays, Pre-Biased Transistors - Bipolar (BJT) - Arrays, Pre-Biased
PRMH10Z PUMH10Z
Product Status Active Active
Transistor Type 2 NPN - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA 100mA
Voltage - Collector Emitter Breakdown (Max) 50V 50V
Resistor - Base (R1) 2.2kOhms 2.2kOhms
Resistor - Emitter Base (R2) 47kOhms 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 5V 100 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 100mV @ 250µA, 5mA 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 100nA 100nA
Frequency - Transition 230MHz 230MHz
Power - Max 480mW 300mW
Mounting Type Surface Mount Surface Mount
Package / Case 6-XFDFN Exposed Pad 6-TSSOP, SC-88, SOT-363
Supplier Device Package DFN1412-6 6-TSSOP