PUMF12,115 vs PUMF11,115

Product Attributes

Part Number PUMF12,115 PUMF11,115
Manufacturer NXP USA Inc. Nexperia USA Inc.
Category Transistors - Bipolar (BJT) - Arrays, Pre-Biased Transistors - Bipolar (BJT) - Arrays, Pre-Biased
PUMF12,115 PUMF11,115
Product Status Active Active
Transistor Type 1 NPN Pre-Biased, 1 PNP 1 NPN Pre-Biased, 1 PNP
Current - Collector (Ic) (Max) 100mA 100mA
Voltage - Collector Emitter Breakdown (Max) 50V, 40V 50V, 40V
Resistor - Base (R1) 22kOhms 22kOhms
Resistor - Emitter Base (R2) 47kOhms 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 5V / 120 @ 1mA, 6V 80 @ 5mA, 5V / 120 @ 1mA, 6V
Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA / 200mV @ 5mA, 50mA 150mV @ 500µA, 10mA / 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 1µA 1µA
Frequency - Transition 100MHz 100MHz
Power - Max 300mW 300mW
Mounting Type Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Supplier Device Package 6-TSSOP 6-TSSOP