PSMN7R0-100ES,127 vs PSMN7R0-100XS,127

Product Attributes

Part Number PSMN7R0-100ES,127 PSMN7R0-100XS,127
Manufacturer Nexperia USA Inc. NXP USA Inc.
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
PSMN7R0-100ES,127 PSMN7R0-100XS,127
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 6.8mOhm @ 15A, 10V 6.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 125 nC @ 10 V 121 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6686 pF @ 50 V 6686 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 269W (Tc) 57.7W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package I2PAK TO-220F
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-220-3 Full Pack, Isolated Tab