PSMN3R9-100YSFX vs PSMN6R9-100YSFX

Product Attributes

Part Number PSMN3R9-100YSFX PSMN6R9-100YSFX
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
PSMN3R9-100YSFX PSMN6R9-100YSFX
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 120A (Ta) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7V, 10V 10V
Rds On (Max) @ Id, Vgs 4.3mOhm @ 25A, 10V -
Vgs(th) (Max) @ Id 4V @ 1mA -
Gate Charge (Qg) (Max) @ Vgs 111 nC @ 10 V 50.3 nC @ 10 V
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 7360 pF @ 50 V -
FET Feature - -
Power Dissipation (Max) 245W (Ta) 238W
Operating Temperature -55°C ~ 150°C (TJ) 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package LFPAK56; Power-SO8 LFPAK56, Power-SO8
Package / Case SOT-1023, 4-LFPAK SC-100, SOT-669