PSMN1R5-40YSDX vs PSMN1R9-40YSDX

Product Attributes

Part Number PSMN1R5-40YSDX PSMN1R9-40YSDX
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
PSMN1R5-40YSDX PSMN1R9-40YSDX
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 240A (Ta) 200A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 1.5mOhm @ 25A, 10V 1.9mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 3.6V @ 1mA 3.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 99 nC @ 10 V 80 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 7752 pF @ 20 V 6198 pF @ 20 V
FET Feature Schottky Diode (Body) Schottky Diode (Body)
Power Dissipation (Max) 238W (Ta) 194W (Ta)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package LFPAK56, Power-SO8 LFPAK56, Power-SO8
Package / Case SC-100, SOT-669 SC-100, SOT-669