PSMN0R7-25YLDX vs PSMN1R7-25YLDX

Product Attributes

Part Number PSMN0R7-25YLDX PSMN1R7-25YLDX
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
PSMN0R7-25YLDX PSMN1R7-25YLDX
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V 25 V
Current - Continuous Drain (Id) @ 25°C 300A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 0.72mOhm @ 25A, 10V 1.7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.2V @ 1mA 2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 110.2 nC @ 10 V 46.7 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 8320 pF @ 12 V 3415 pF @ 12 V
FET Feature - Schottky Diode (Body)
Power Dissipation (Max) 158W (Tc) 135W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package LFPAK56; Power-SO8 LFPAK56, Power-SO8
Package / Case SOT-1023, 4-LFPAK SC-100, SOT-669