PSMN1R1-30PL,127 vs PSMN1R6-30PL,127

Product Attributes

Part Number PSMN1R1-30PL,127 PSMN1R6-30PL,127
Manufacturer NXP Semiconductors Nexperia USA Inc.
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
PSMN1R1-30PL,127 PSMN1R6-30PL,127
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.3mOhm @ 25A, 10V 1.7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.2V @ 1mA 2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 243 nC @ 10 V 212 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 14850 pF @ 15 V 12493 pF @ 12 V
FET Feature - -
Power Dissipation (Max) 338W (Tc) 306W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220AB TO-220AB
Package / Case TO-220-3 TO-220-3