PSMN1R4-30YLDX vs PSMN1R0-30YLDX

Product Attributes

Part Number PSMN1R4-30YLDX PSMN1R0-30YLDX
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
PSMN1R4-30YLDX PSMN1R0-30YLDX
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.42mOhm @ 25A, 10V 1.02mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.2V @ 1mA 2.2V @ 2mA
Gate Charge (Qg) (Max) @ Vgs 54.8 nC @ 10 V 121.35 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3840 pF @ 15 V 8598 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 166W (Tc) 238W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package LFPAK56, Power-SO8 LFPAK56, Power-SO8
Package / Case SC-100, SOT-669 SC-100, SOT-669