PSMN165-200K518 vs PSMN165-200K,518

Product Attributes

Part Number PSMN165-200K518 PSMN165-200K,518
Manufacturer NXP USA Inc. Nexperia USA Inc.
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
PSMN165-200K518 PSMN165-200K,518
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 2.9A (Tc) 2.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 165mOhm @ 2.5A, 10V 165mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V 40 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1330 pF @ 25 V 1330 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 3.5W (Tc) 3.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-SO 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)