| Part Number | PQMD12Z | PQMD10Z |
|---|---|---|
| Manufacturer | NXP USA Inc. | Nexperia USA Inc. |
| Category | Transistors - Bipolar (BJT) - Arrays, Pre-Biased | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
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| Product Status | Active | Active |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Current - Collector (Ic) (Max) | 100mA | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V | 50V |
| Resistor - Base (R1) | 47kOhms | 2.2kOhms |
| Resistor - Emitter Base (R2) | 47kOhms | 47kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 5V | 100 @ 10mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA | 100mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) | 1µA |
| Frequency - Transition | 230MHz, 180MHz | 230MHz, 180MHz |
| Power - Max | 350mW | 230mW |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | 6-XFDFN Exposed Pad | 6-XFDFN Exposed Pad |
| Supplier Device Package | DFN1010B-6 | DFN1010B-6 |