PMZB200UNEYL vs PMZB600UNEYL

Product Attributes

Part Number PMZB200UNEYL PMZB600UNEYL
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
PMZB200UNEYL PMZB600UNEYL
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 20 V
Current - Continuous Drain (Id) @ 25°C 1.4A (Ta) 600mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V 1.2V, 4.5V
Rds On (Max) @ Id, Vgs 250mOhm @ 1.4A, 4.5V 620mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250µA 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 2.7 nC @ 4.5 V 0.7 nC @ 4.5 V
Vgs (Max) ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 89 pF @ 15 V 21.3 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 350mW (Ta), 6.25W (Tc) 360mW (Ta), 2.7W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package DFN1006B-3 DFN1006B-3
Package / Case 3-XFDFN 3-XFDFN