PMT200EPEX vs PMT200EPEAX

Product Attributes

Part Number PMT200EPEX PMT200EPEAX
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
PMT200EPEX PMT200EPEAX
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 70 V 70 V
Current - Continuous Drain (Id) @ 25°C 2.4A (Ta) 2.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 167mOhm @ 2.4A, 10V 167mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15.9 nC @ 10 V 15.9 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 822 pF @ 35 V 822 pF @ 35 V
FET Feature - -
Power Dissipation (Max) 800mW (Ta) 800mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-223 SOT-223
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA