PMPB55ENEAX vs PMPB50ENEAX

Product Attributes

Part Number PMPB55ENEAX PMPB50ENEAX
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
PMPB55ENEAX PMPB50ENEAX
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 30 V
Current - Continuous Drain (Id) @ 25°C 4A (Ta) 5.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 56mOhm @ 10A, 10V 43mOhm @ 5.1A, 10V
Vgs(th) (Max) @ Id 2.7V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V 10 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 435 pF @ 30 V 271 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 1.65W (Ta) 1.9W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package DFN2020MD-6 DFN2020MD-6
Package / Case 6-UDFN Exposed Pad 6-UDFN Exposed Pad