PMPB23XNE,115 vs PMPB29XNE,115

Product Attributes

Part Number PMPB23XNE,115 PMPB29XNE,115
Manufacturer NXP USA Inc. Nexperia USA Inc.
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
PMPB23XNE,115 PMPB29XNE,115
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 30 V
Current - Continuous Drain (Id) @ 25°C 7A (Ta) 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 22mOhm @ 7A, 4.5V 33mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 4.5 V 18.6 nC @ 4.5 V
Vgs (Max) ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 1136 pF @ 10 V 1150 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 1.7W (Ta), 12.5W (Tc) 1.7W (Ta), 12.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package DFN1010B-6 DFN2020MD-6
Package / Case 6-XFDFN Exposed Pad 6-UDFN Exposed Pad