PMPB100ENEX vs PMPB100ENEAX

Product Attributes

Part Number PMPB100ENEX PMPB100ENEAX
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
PMPB100ENEX PMPB100ENEAX
Product Status Active Active
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 30 V -
Current - Continuous Drain (Id) @ 25°C 5.1A (Ta) -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V -
Rds On (Max) @ Id, Vgs 72mOhm @ 3.9A, 10V -
Vgs(th) (Max) @ Id 2.5V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 5 nC @ 10 V -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 157 pF @ 15 V -
FET Feature - -
Power Dissipation (Max) 3.3W (Ta) -
Operating Temperature -55°C ~ 175°C (TJ) -
Mounting Type Surface Mount Surface Mount
Supplier Device Package DFN2020MD-6 DFN2020MD-6
Package / Case 6-UDFN Exposed Pad 6-UDFN Exposed Pad