| Part Number | PMEM4030NS,115 | PMEM4030PS,115 |
|---|---|---|
| Manufacturer | NXP USA Inc. | NXP USA Inc. |
| Category | Transistors - Bipolar (BJT) - Single | Transistors - Bipolar (BJT) - Single |
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| Product Status | Obsolete | Obsolete |
| Transistor Type | NPN + Diode (Isolated) | PNP + Diode (Isolated) |
| Current - Collector (Ic) (Max) | 2 A | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V | 50 V |
| Vce Saturation (Max) @ Ib, Ic | 370mV @ 300mA, 3A | 390mV @ 300mA, 3A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 1A, 2V | 200 @ 1A, 2V |
| Power - Max | 1 W | 1 W |
| Frequency - Transition | 100MHz | 100MHz |
| Operating Temperature | 150°C (TJ) | - |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SO | 8-SO |