PMEM4010PD,115 vs PMEM4010ND,115

Product Attributes

Part Number PMEM4010PD,115 PMEM4010ND,115
Manufacturer NXP USA Inc. NXP USA Inc.
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
PMEM4010PD,115 PMEM4010ND,115
Product Status Obsolete Obsolete
Transistor Type PNP + Diode (Isolated) NPN + Diode (Isolated)
Current - Collector (Ic) (Max) 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 40 V 40 V
Vce Saturation (Max) @ Ib, Ic 310mV @ 100mA, 1A 210mV @ 100mA, 1A
Current - Collector Cutoff (Max) 100nA 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 100mA, 5V 300 @ 500mA, 5V
Power - Max 600 mW 600 mW
Frequency - Transition 150MHz 150MHz
Operating Temperature 125°C (TJ) 125°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SC-74, SOT-457 SC-74, SOT-457
Supplier Device Package SC-74 SC-74