| Part Number | PMCM650VNEZ | PMCM650VNE |
|---|---|---|
| Manufacturer | NXP USA Inc. | NXP USA Inc. |
| Category | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
|
|
|
| Product Status | Obsolete | Active |
| FET Type | N-Channel | - |
| Technology | MOSFET (Metal Oxide) | - |
| Drain to Source Voltage (Vdss) | 12 V | - |
| Current - Continuous Drain (Id) @ 25°C | 6.4A (Ta) | - |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V | - |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 3A, 4.5V | - |
| Vgs(th) (Max) @ Id | 900mV @ 250µA | - |
| Gate Charge (Qg) (Max) @ Vgs | 15.4 nC @ 4.5 V | - |
| Vgs (Max) | ±8V | - |
| Input Capacitance (Ciss) (Max) @ Vds | 1060 pF @ 6 V | - |
| FET Feature | - | - |
| Power Dissipation (Max) | 556mW (Ta), 12.5W (Tc) | - |
| Operating Temperature | -55°C ~ 150°C (TJ) | - |
| Mounting Type | Surface Mount | - |
| Supplier Device Package | 6-WLCSP (1.48x0.98) | - |
| Package / Case | 6-XFBGA, WLCSP | - |