PMCM650VNEZ vs PMCM6501VNEZ

Product Attributes

Part Number PMCM650VNEZ PMCM6501VNEZ
Manufacturer NXP USA Inc. Nexperia USA Inc.
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
PMCM650VNEZ PMCM6501VNEZ
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V 12 V
Current - Continuous Drain (Id) @ 25°C 6.4A (Ta) 7.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 25mOhm @ 3A, 4.5V 18mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15.4 nC @ 4.5 V 24 nC @ 4.5 V
Vgs (Max) ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 1060 pF @ 6 V 920 pF @ 6 V
FET Feature - -
Power Dissipation (Max) 556mW (Ta), 12.5W (Tc) 556mW (Ta), 12.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 6-WLCSP (1.48x0.98) 6-WLCSP (1.48x0.98)
Package / Case 6-XFBGA, WLCSP 6-XFBGA, WLCSP