PMCM6501VPEZ vs PMCM6501UPEZ

Product Attributes

Part Number PMCM6501VPEZ PMCM6501UPEZ
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
PMCM6501VPEZ PMCM6501UPEZ
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V 20 V
Current - Continuous Drain (Id) @ 25°C 6.2A (Ta) 7.3A (Tj)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 25mOhm @ 3A, 4.5V -
Vgs(th) (Max) @ Id 900mV @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 29.4 nC @ 4.5 V 19.1 nC @ 4.5 V
Vgs (Max) ±8V -
Input Capacitance (Ciss) (Max) @ Vds 1400 pF @ 6 V -
FET Feature - -
Power Dissipation (Max) 556mW (Ta), 12.5W (Tc) 556mW
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 6-WLCSP (1.48x0.98) 6-WLCSP (1.48x0.98)
Package / Case 6-XFBGA, WLCSP 6-XFBGA, WLCSP