PHX18NQ11T,127 vs PHX8NQ11T,127

Product Attributes

Part Number PHX18NQ11T,127 PHX8NQ11T,127
Manufacturer NXP USA Inc. NXP USA Inc.
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
PHX18NQ11T,127 PHX8NQ11T,127
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 110 V 110 V
Current - Continuous Drain (Id) @ 25°C 12.5A (Tc) 7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 90mOhm @ 9A, 10V 180mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 21 nC @ 10 V 14.7 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 635 pF @ 25 V 360 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 31.2W (Tc) 27.7W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220F TO-220F
Package / Case TO-220-3 Full Pack, Isolated Tab TO-220-3 Full Pack, Isolated Tab