PHU101NQ03LT,127 vs PHU108NQ03LT,127

Product Attributes

Part Number PHU101NQ03LT,127 PHU108NQ03LT,127
Manufacturer NXP USA Inc. NXP USA Inc.
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
PHU101NQ03LT,127 PHU108NQ03LT,127
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 25 V
Current - Continuous Drain (Id) @ 25°C 75A (Tc) 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 5.5mOhm @ 25A, 10V 6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 5 V 16.3 nC @ 4.5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2180 pF @ 25 V 1375 pF @ 12 V
FET Feature - -
Power Dissipation (Max) 166W (Tc) 187W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package I-PAK I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA