Part Number | PHT6NQ10T,135 | PHT2NQ10T,135 |
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Manufacturer | Nexperia USA Inc. | NXP USA Inc. |
Category | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
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Product Status | Active | Obsolete |
FET Type | N-Channel | N-Channel |
Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100 V | 100 V |
Current - Continuous Drain (Id) @ 25°C | 3A (Ta) | 2.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V |
Rds On (Max) @ Id, Vgs | 90mOhm @ 3A, 10V | 430mOhm @ 1.75A, 10V |
Vgs(th) (Max) @ Id | 4V @ 1mA | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V | 5.1 nC @ 10 V |
Vgs (Max) | ±20V | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 633 pF @ 25 V | 160 pF @ 25 V |
FET Feature | - | - |
Power Dissipation (Max) | 1.8W (Ta), 8.3W (Tc) | 6.25W (Tc) |
Operating Temperature | -65°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) |
Mounting Type | Surface Mount | Surface Mount |
Supplier Device Package | SOT-223 | SC-73 |
Package / Case | TO-261-4, TO-261AA | TO-261-4, TO-261AA |