PHT6NQ10T,135 vs PHT2NQ10T,135

Product Attributes

Part Number PHT6NQ10T,135 PHT2NQ10T,135
Manufacturer Nexperia USA Inc. NXP USA Inc.
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
PHT6NQ10T,135 PHT2NQ10T,135
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 3A (Ta) 2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 90mOhm @ 3A, 10V 430mOhm @ 1.75A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 21 nC @ 10 V 5.1 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 633 pF @ 25 V 160 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 1.8W (Ta), 8.3W (Tc) 6.25W (Tc)
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-223 SC-73
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA