PHT4NQ10T,135 vs PHT4NQ10LT,135

Product Attributes

Part Number PHT4NQ10T,135 PHT4NQ10LT,135
Manufacturer Nexperia USA Inc. NXP USA Inc.
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
PHT4NQ10T,135 PHT4NQ10LT,135
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 3.5A (Tc) 3.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 5V
Rds On (Max) @ Id, Vgs 250mOhm @ 1.75A, 10V 250mOhm @ 1.75A, 5V
Vgs(th) (Max) @ Id 4V @ 1mA 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 7.4 nC @ 10 V 12.2 nC @ 5 V
Vgs (Max) ±20V ±16V
Input Capacitance (Ciss) (Max) @ Vds 300 pF @ 25 V 374 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 6.9W (Tc) 6.9W (Tc)
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-223 SC-73
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA