Part Number | PHK4NQ10T,518 | PHK4NQ20T,518 |
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Manufacturer | NXP USA Inc. | NXP USA Inc. |
Category | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
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Product Status | Obsolete | Obsolete |
FET Type | N-Channel | N-Channel |
Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100 V | 200 V |
Current - Continuous Drain (Id) @ 25°C | - | 4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | 5V, 10V |
Rds On (Max) @ Id, Vgs | 70mOhm @ 4A, 10V | 130mOhm @ 4A, 10V |
Vgs(th) (Max) @ Id | 4V @ 1mA | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V | 26 nC @ 10 V |
Vgs (Max) | ±20V | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 880 pF @ 25 V | 1230 pF @ 25 V |
FET Feature | - | - |
Power Dissipation (Max) | 2.5W (Ta) | 6.25W (Tc) |
Operating Temperature | -65°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount | Surface Mount |
Supplier Device Package | 8-SO | 8-SO |
Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) |