PHK4NQ10T,518 vs PHK4NQ20T,518

Product Attributes

Part Number PHK4NQ10T,518 PHK4NQ20T,518
Manufacturer NXP USA Inc. NXP USA Inc.
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
PHK4NQ10T,518 PHK4NQ20T,518
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 200 V
Current - Continuous Drain (Id) @ 25°C - 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 70mOhm @ 4A, 10V 130mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V 26 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 880 pF @ 25 V 1230 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 2.5W (Ta) 6.25W (Tc)
Operating Temperature -65°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-SO 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)