PHE13003C,412 vs PHE13003A,412

Product Attributes

Part Number PHE13003C,412 PHE13003A,412
Manufacturer WeEn Semiconductors NXP USA Inc.
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
PHE13003C,412 PHE13003A,412
Product Status Active Active
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 1.5 A 1 A
Voltage - Collector Emitter Breakdown (Max) 400 V 400 V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 500mA, 1.5A 1.5V @ 250mA, 750mA
Current - Collector Cutoff (Max) 100µA 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce 5 @ 1A, 2V 10 @ 400mA, 5V
Power - Max 2.1 W 2.1 W
Frequency - Transition - -
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package TO-92-3 TO-92-3