PHD38N02LT,118 vs PHB38N02LT,118

Product Attributes

Part Number PHD38N02LT,118 PHB38N02LT,118
Manufacturer Nexperia USA Inc. NXP USA Inc.
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
PHD38N02LT,118 PHB38N02LT,118
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 44.7A (Tc) 44.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V 2.5V, 5V
Rds On (Max) @ Id, Vgs 16mOhm @ 25A, 5V 16mOhm @ 25A, 5V
Vgs(th) (Max) @ Id 1.5V @ 250µA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15.1 nC @ 5 V 15.1 nC @ 5 V
Vgs (Max) ±12V 12V
Input Capacitance (Ciss) (Max) @ Vds 800 pF @ 20 V 800 pF @ 20 V
FET Feature - -
Power Dissipation (Max) 57.6W (Tc) 57.6W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package DPAK D2PAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB