PHD16N03LT,118 vs PHD16N03T,118

Product Attributes

Part Number PHD16N03LT,118 PHD16N03T,118
Manufacturer NXP USA Inc. NXP USA Inc.
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
PHD16N03LT,118 PHD16N03T,118
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 16A (Tc) 13.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 10V
Rds On (Max) @ Id, Vgs 67mOhm @ 16A, 10V 100mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 8.5 nC @ 10 V 5.2 nC @ 10 V
Vgs (Max) ±15V ±20V
Input Capacitance (Ciss) (Max) @ Vds 210 pF @ 30 V 180 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 32.6W (Tc) 32.6W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63