PHB21N06LT,118 vs PHB11N06LT,118

Product Attributes

Part Number PHB21N06LT,118 PHB11N06LT,118
Manufacturer Nexperia USA Inc. NXP USA Inc.
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
PHB21N06LT,118 PHB11N06LT,118
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V
Current - Continuous Drain (Id) @ 25°C 19A (Tc) 10.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 70mOhm @ 10A, 10V 130mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 9.4 nC @ 5 V 5.2 nC @ 5 V
Vgs (Max) ±15V ±15V
Input Capacitance (Ciss) (Max) @ Vds 650 pF @ 25 V 330 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 56W (Tc) 33W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D2PAK D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB