| Part Number | PH2369,112 | PH2369,116 |
|---|---|---|
| Manufacturer | NXP USA Inc. | NXP USA Inc. |
| Category | Transistors - Bipolar (BJT) - Single | Transistors - Bipolar (BJT) - Single |
|
|
|
| Product Status | Obsolete | Obsolete |
| Transistor Type | NPN | NPN |
| Current - Collector (Ic) (Max) | 200 mA | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 15 V | 15 V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA | 250mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 400nA (ICBO) | 400nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 10mA, 1V | 40 @ 10mA, 1V |
| Power - Max | 500 mW | 500 mW |
| Frequency - Transition | 500MHz | 500MHz |
| Operating Temperature | 150°C (TJ) | 150°C (TJ) |
| Mounting Type | Through Hole | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Supplier Device Package | TO-92-3 | TO-92-3 |